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光電工程系
DEPARTMENT OF ELECTRO-OPTICAL ENGINEERING NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY
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首頁 > 教師資料 > 陳堯輝
陳堯輝
Phone: (02)2771-2171 ext.4628
Fax: (02)8773-3216
Office:億光1030室
E-mail: YHChen@ntut.edu.tw
homepage:
Laboratory: 光調製反射光譜實驗室
陳堯輝 教授 in electro-optical engineering
  
Y.H. Chen was born in Taiwan,R.O.C.,in 1959.
He received the B.A. degree in physics from the National Taiwan University in 1982, the M.A. degree in electroptics from the National Chiao-Tong University in 1987, and the Ph.D. degree in electrical engineering from the National Taiwan University in 1994.
Since 1987,he has been with the Department of Physics at the National Taipei Institute of Technology.In 1994,he become Associate Professor,teaching a course on general physics and optoelectronics.He is currenly involved in research on microstructures of semicondctor devices using modulation soectroscopy.
 
最高學歷
國立台灣大學電機所博士,78.8~83.7
國立交通大學光電所!碩士,74.8~76.7
國立台灣大學物理所!學士,67.8~71.7
 
現職及相關經歷
1.國立台北科技大學光電工程系教授,88.8~
2.國立台北技術學院光電工程系副教授,83.8~88.7
3.國立台北工專光電工程系講師,76.7~83.7
 
授課課程
1.大學部,基礎物理
2.大學部,光電子學
 
研究領域
1.光調製反射光譜術
2.探究直接能隙之異質結構如量子井
3.量子點及疊晶格等及異質接面之電子元件等
 
研究計劃
1.快速傅立葉轉換在光調製反射光譜的應用application of fast fourier transformation on photorefelectance spectra
 
研究成果殊榮
 
 
期刊論文

1.Y.H.Chen, "Direct determination of Fermi level pinning by the amplitude of photoreflectance spectra", J. of National Taipei University of Technology, 32(1), 1(1999).

2.Y.H.Chen, "Carrier concentration determinated by photoreflectance", J. of National Taipei University of Technology, 32(1), 9(1999).

3.C.H.Chan, Y.F.Chen, M.C.Chen, H.H.Lin, G.J.Jan, and Y.H.Chen,"Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes", J. Appl. Phys., 84, 1595(1998).

4.Y.H.Chen, C.H.Chan, and G.J.Jan,"Investigation of GaAs/AlGaAs multiple quantum well waveguides involving unconfined energy states", J. Vacuum Sci. and Technol., B, 6, 570(1998).

5.C.H.Chan, M.C.Chen, H.H.Lin, Y.F.Chen, G.J.Jan, and Y.H.Chen,"Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy", Appl. Phys. Lett., 72, 1208(1998).

6.Y.H.Chen,"Photoreflectance characterization of strained (111)B InGaAs/GaAs quantum well p-i-n diode structures", J. of National Taipei University of Technology, 31(1), 47(1998).

7.Y.H.Chen,"Fast Fourier transformation on photoreflectance spectra", J. of Taipei Institute of Technology, 30(2), 1(1997).

8.Y.H.Chen and G.J.Jan,"Photoreflectance characterization on the InAlAs/InGaAs heterojunction bipolar transistors", IEEE J. Quantum Electron., 33, 574(1997).

9.Y.H.Chen,"Study of miniband dispersion of the unconfined states of multiple quantum well waveguides", J. of Taipei Institute of Technology, 30(1), 1(1997).

10.Y.H.Chen,"Room-temperature photoreflectance as an efficient tool for growth studies of InAlGaAs on InP by molecular beam epitaxy", J. of Taipei Institute of Technology, 29(2), 1(1996).

11.Y.H.Chen,"Fast Fourier transformation of photoreflectance spectrum", J. of Taipei Institute of Technology, 13(1996).

12.Y.H.Chen,"Photoreflectance characterization of InAlAs/InGaAs heterojunction bipolar transitors with various spacer thickness", J. of Taipei Institute of Technology, 29(1), 12(1996).

13.K.L.Chen, H.H.Lin, G.J.Jan, Y.H.Chen, and P.K.Tseng,"Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers", J. Appl. Phys., 78, 4035(1995).

14.Y.H.Chen,"Determing energy-band offsets of InAlAs/InGaAs heterostructure using only photoreflectance data」, J. of Taipei Institute of Technology, 28(2), 1(1995).

15.Y.H.Chen and G.J. Jan,"Photoreflectance study on the two-dimensional electron gas of InAlAs/InGaAs heterojunction bipolar trabsistor grown by molecular beam epitaxy", J. Appl. Phys., 77, 6681(1995).

16.K.L.Chen, H.H.Lin, G.J.Jan, Y.H.Chen, and P.K.Tseng,"Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers", Appl. Phys. Lett., 66, 2697(1995).

17.Y.H.Chen,"Photoreflectance characterization of InAlAs/InGaAs heterojunction bipolar transistor with a 300 Å spacer", J. of Taipei Institute of Technology, 28(1), 33(1995).

18.Y.H.Chen,"The nature of photoreflectance line shape in GaAs", J. of Taipei Institute of Technology,28(1), 21(1995).

19.Y.H.Chen,"Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor", J. of Taipei Institute of Technology, 27(2), 1(1994).

20.Y.H.Chen, K.T.Hsu, K.L.Chen, H.H.Lin, and G.J.Jan,"Room-temperature photoreflectance characterization of an InAlAs/InGaAs heterojunction bipolar transistor structure including two-dimensional electron gas", Japan, J. Appl. Phys., 33, 2448(1994).

21.K.T.Hsu, Y.H.Chen, K.L.Chen, H.P.Chen, H.H.Lin, and G.J.Jan,"Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor", Appl. Phys. Lett., 64, 1974(1994).

 
研討會論文

1.Y.H.Chen and R.M.Chen, 「Fermi level pinning of GaAs at room temperature directly determined by the amplitude of photoreflectance spectra」, Proc. SPIE, 423(2000).

2.Y.H.Chen, "Fast Fourier transformation on photoreflectance spectra", 臺灣光電科技研討會, 交通大學, 新竹(1997).

3.C.M.Lai, P.F.Yang, H.H.Lin, Y.H.Chen, and G.J.Jan, "Photoreflectance characterization of InGaAsP strained quantum well structures", International Symposium on control of semiconductor interfaces, Karuizawa, Japan(1996).

4.Y.H.Chen, "Determing energy-band offsets of InAlAs/InGaAs heterojunction using only photoreflectance data", 光譜技術與表面科學研討會(1995).

 
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