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光電工程系
DEPARTMENT OF ELECTRO-OPTICAL ENGINEERING NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY
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洪魏寬
Phone: (02)-27712171 ext.4632
Fax: (02)-87733216
Office:億光1029室
E-mail: wkhung@ntut.edu.tw
homepage:
Laboratory: 光電物理實驗室
洪魏寬 助理教授 in electro-optical engineering
  
 
 
最高學歷
國立台灣大學,物理系博士
 
現職及相關經歷
國立台北科技大學光電工程系助理教授,2002/08~
國立台灣大學!物理系博士後研究員,2000/08~2002/07
 
授課課程
1.四技,物理─大學物理
2.二技,雷射導論
3.研究所,雷射原理與應用
4.研究所, 奈米材料導論
 
研究領域
1.光電材料之製作與量測
2.半導體物理
3.奈米材料
4.脈衝雷射蒸鍍
 
研究計劃
1.(國科會)新穎光電材料的製作與物理性質的探討(1/2), 92/08/01~93/07/31.
2.(國科會)新穎光電材料的製作與物理性質的探討(2/2),93/08/01~94/07/31.
 
研究成果殊榮
 
 
期刊論文
1. N. E. Hsu, W. K. Hung, and Y. F. Chen, 「Origin of defect emission identified by polarized luminescence from aligned ZnO nanorods」, J. Appl. Phys. 96, 4671 (2004).
2. J. R. Juang, D. R. Hang, Tsai-Yu Huang, W. K. Hung, Y. F. Chen, Gil-Ho Kim, Ming-Gu Lin, Tse-Ming Chen, C.-T. Liang, Y. Lee, Jae-Hoon Lee, and Jung-Hee Lee, 「Conventional and microwave-modulated Shubnikov-de Haas oscillations in GaN electron systems」, Physica E 21, 631 (2004).
3. D. R. Hang, J.-R. Juang, Tsai-Yu Huang, C.-T. Liang, W. K. Hung, Y. F. Chen, Gil-Ho Kim, Jae-Hoon Lee, Jung-Hee Lee and C. F. Huang, 「Microwave-modulated Shubnikov-de Haas oscillations in a two-dimensional GaN electron gas」, Physica E 22, 578 (2004).
4. R. Hang, D. K. Shih, C. F. Huang, W. K. Hung, Y. H. Chang, Y. F. Chen, and H. H. Lin, 「Large effective mass enhancement of the InAsN alloys in the dilute limit probed by Shubnikov-de Haas oscillations」, Physica E 22, 308 (2004).
5. D. R. Hang, C.-T. Liang, J.-R. Juang, Tsai-Yu Huang, W. K. Hung, Y. F. Chen, Gil-Ho Kim, Jae-Hoon Lee and Jung-Hee Lee, 「Electrically detected and microwave-modulated Shubnikov-de Haas oscillations in an Al0.4Ga0.6N/GaN heterostructure」, J. Appl. Phys. 93, 2055 (2003).
6. D. R. Hang, C. F. Huang, W. K. Hung, Y. H. Chang, J. C. Chen, H. C. Yang, Y. F. Chen, D. K. Shih, T. Y. Chu, and H. H. Lin, 「Shubnikov-de Hass oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well」, Semicond. Sci. Technol., 17, 999 (2002).
7. W. K. Hung, K. S. Cho, M. Y. Chern, Y. F. Chen, D. K. Shih, H. H. Lin, C. C. Lu, and T. R. Yang, 「Nitrogen-induced enhancement of the electron effective mass in InNxAs1-x」, Appl. Phys. Lett. 80, 796 (2002).
8. W. K. Hung, M. Y. Chern, Y. F. Chen, W. C. Chou, C. S. Yang, C. C. Cheng and J. L. Shen, 「Optical properties of Zn1-xMnxSe (x 0.78) epilayers」, Solid State Commun. 120, 311 (2001).
9. J. C. Fan, W. K. Hung, Y. F. Chen, J. S. Wang, and H. H. Lin, 「 Mechanism for photoluminescence in InAsN/InGaAs single quantum well 」, Phys. Rev. B 62, 10990 (2000).
10. W. K. Hung, M. Y. Chern, Y. F. Chen, Z. L. Yang, and Y. S. Huang, 「 Optical properties of GaAs1-xNx on GaAs 」, Phys. Rev. B 62, 13028 (2000).
11. W. K. Hung, M. Y. Chern, and Y. F. Chen, 「 Epitaxial GaNxAs1-x layer formed by pulsed laser irradiation of GaAs in an ambient nitrogen gas 」, Semicond. Sci. Technol. 15, 892 (2000).
12. W. K. Hung, M. Y. Chern, J. C. Fan, T. Y. Lin, and Y. F. Chen, 「 Pulsed laser deposition of epitaxial GaNxAs1-x on GaAs 」, Appl. Phys. Lett. 74, 3951 (1999).
 
研討會論文
1. D. R. Hang, D. K. Shih, C. F. Huang, W. K. Hung, Y. H. Chang, Y. F. Chen, H. H. Lin, 「Transport measurements in InAsN/InGaAs two-dimensional electron systems」, Annual meeting of the American Physical Society , March 2004.
2. D. R. Liu, J. S. Kao, P. T. Cheng, J. S. Chen, W. K. Hung, C. H. Tsai, I. N. Lin, 「Optical properties of lanthanum doped lead titanate thin films grown by pulsed laser deposition」, Annual meeting of Chinese Physical Society, 2004.
3. Ming-Gu Lin, D. R. Hang, J. R. Juang, Tsai-Yu Huang, Gil-Ho Kim,C.-T. Liang, Y. F. Chen, W. K. Hung, Woon-Ho Seo, Yoonseok Lee and Jung-Hee Lee, 「Microwave-modulated Shubnikov-de Hass-like oscillations in an Al0.4Ga0.6N/GaN electron system」, Annual meeting of Chinese Physical Society, 2004.
4. Tzyy-Jiann Wang, Zheng-Ji Ma, Wei-Kuan Hung, Way-Seen Wang, 「Characteristics of nickel-diffused periodically segmented waveguides in LiNbO3」, Proceedings of Optics and Photonics/Taiwan'03, Vol. 2, 209 (2003).
5. J.R. Juang, D.R. Hang, T.Y. Huang , W.K. Hung, Y.F. Chen, G.H. Kim , M.G. Lin, T.M. Chen , C.T. Liang, J.H. Lee, 「Conventional and microwave-modulated Shubnikov-de Haas ocsillaitons in GaN/AlGaN heterostructures」, The 11th international conference on modulated semiconductor structures, Nara, Japan, 2003.
6. D. R. Hang, J.-R. Juang, Tsai-Yu Huang, C. –T. Liang, W. K. Hung, Y. F. Chen, Gil-Ho Kim, Y. Lee, Jae-Hoon Lee, Jung-Hee Lee, and C. F. Huang, 「Microwave-modulated Shubnikov-de Haas oscillations in a two-dimensional GaN electron gas」, The 15th International Conference on Electronic Properties of Two-Dimensional Systems, Nara, Japan, 2003.
7. D. R. Hang, D. K. Shih, C. F. Huang, W. K. Hung, Y. H. Chang, Y. F. Chen, and H. H. Lin, 「Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Shubnikov-de Haas oscillations」, The 15th International Conference on Electronic Properties of Two-Dimensional Systems, Nara, Japan, 2003.
8. W. K. Hung, D. R. Hang , M. Y. Chern, Y. F. Chen, D. R. Liu, D. K. Shih and H. H. Lin, 「Electronic properties of InNAs alloy studied by spectroscopic ellipsometry」, Annual meeting of Chinese Physical Society, 2003.
9. D. R. Hang, Y. H. Chang, Y. F. Chen, C. F. Huang, W. K. Hung, D. K. Shih, and H. H. Lin, 「Effective mass enhancement of InAsN-based semiconductor heterostructures」, Annual meeting of Chinese Physical Society, 2003.
10. W. K. Hung, D. R. Liu, D. R. Hang, K. S. Cho, M. Y. Chern, Y. F. Chen, D. K. Shih, H. H. Lin, T. R. Yang, Y. S. Huang, 「Studies on the synthesis and electronic properties of III-N-V semiconductor alloys」, The 20th Conference of Spectroscopy and Surface Science, Taichung, Taiwan, R, O. C., 2002.
11. D. R. Hang, C. –T. Liang, J. –R. Juang, Tsai-Yu Huang, W. K. Hung, Y. F. Chen, Gil-Ho Kim, Jae-Hoon Lee, and Jung-Hee Lee, 「Electrically detected and microwave-modulated Shubnikov-de Haas oscillations in an AlGaN/GaN heterostructure」, The 20th Conference of Spectroscopy and Surface Science, Taichung, Taiwan, R, O. C., 2002.
12. D. R. Hang, C. F. Huang, W. K. Hung, Y. H. Chang, H. C. Yang, Y. F. Chen, D. K. Shih, and H. H. Lin, 「Electronic and optical studies on InAsN/InGaAs quantum well」, Annual meeting of the American Physical Society , March 2002.
13. W. K. Hung, K. S. Cho, D. R. Liu, M. Y. Chern, Y. F. Chen, D. K. Shih, H. H. Lin, C. C. Lu, and T. R. Yang, 「Electronic properties of InNAs alloy grown by molecular beam epitaxy」, Annual meeting of Chinese Physical Society, 2002.
14. W. K. Hung, M. Y. Chern, Y. F. Chen, W. C. Chou, C. S. Yang, and C. C. Cheng, 「Optical properties of ZnMnSe alloys」, Annual meeting of Chinese Physical Society, 2001.
15. Y. F. Chen, W. K. Hung, J. C. Fan, J. S. Wang, and H. H. Lin, 「Mechanism for photoluminescence in InAsN/InGaAs single quantum well」, Proc. Int. Workshop on Nitrides Semiconductors, IPAP Conf. Series 1, pp. 437 – 440 (2000).
16. W. K. Hung, M. Y. Chern, J. C. Fan, T. Y. Lin, and Y. F. Chen, 「Pulsed laser deposition of GaAsN on GaAs 」, Annual meeting of Chinese Physical Society, 1999.
17. J. S. Wang, H. H. Lin, T. Y. Lin, Y. F. Chen, W. K. Hung, and M. Y. Chern, 「 Epitaxial growth of the GaN film on (0001) sapphire by RF atomic nitrogen plasma assisted gas source molecular beam epitaxy 」, 1998 International Electron Devices and Material Symposia, 20-23, Taiwan, 1998.
18. W. K. Hung, M. Y. Chen, and Y. F. Chen, 「 Self-assembled InSb quantum dots on GaAs (001) substrate grown by pulsed laser deposition 」, Annual meeting of Chinese Physical Society, 1998.
 
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